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Pano tinoratidza imbibition-induced, inongoerekana yaita uye yakasarudzika yekunyorova zvimiro zvegallium-based liquid simbi alloys panzvimbo dzakagadzirwa nesimbi ine microscale topographical features.Gallium-based liquid metal alloys zvinhu zvinoshamisa zvine kushushikana kukuru kwepamusoro.Nokudaro, zvakaoma kuvaumba kuva mafirimu matete.Kunyorova kwakazara kwe eutectic alloy ye gallium uye indium yakawanikwa pane microstructured mhangura pamusoro pamberi peHCl vapors, iyo yakabvisa yakasikwa oxide kubva mumvura yesimbi alloy.Uku kunyorova kunotsanangurwa nenhamba zvichibva pamuenzaniso weWenzel uye maitiro eosmosis, zvichiratidza kuti saizi yemicrostructure yakakosha pakunyorova kwesimbi dzemvura.Pamusoro pezvo, isu tinoratidza kuti kunyorova kwega kwesimbi kwemvura kunogona kutungamirwa pamwe nematunhu ane microstructured panzvimbo yesimbi kugadzira mapatani.Iyi yakapfava maitiro akaenzana mabhachi uye maumbirwo simbi yemvura pamusoro penzvimbo dzakakura pasina simba rekunze kana kubata kwakaoma.Isu takaratidza kuti simbi yemvura patterned substrates inochengeta magetsi ekubatanidza kunyangwe akatambanudzwa uye mushure mekudzokororwa kutenderera kwekutambanudza.
Gallium based liquid metal alloys (GaLM) yakwezva kutarisisa zvakanyanya nekuda kwehunhu hwadzo hunoyevedza senge yakaderera kunyungudika, yakakwira magetsi conductivity, yakaderera viscosity uye kuyerera, yakaderera toxicity uye yakakwirira deformability1,2.Pure gallium ine nzvimbo yekunyungudika ingangoita 30 ° C, uye kana yasanganiswa muzvinyorwa zveeutectic nemamwe masimbi akadai saIn and Sn, nzvimbo yekunyunguduka iri pazasi tembiricha yekamuri.Iwo maviri akakosha maGLMs gallium indium eutectic alloy (EGaIn, 75% Ga uye 25% In nekurema, nzvimbo yekunyungudika: 15.5 °C) uye gallium indium tin eutectic alloy (GaInSn kana galinstan, 68.5% Ga, 21.5% In, uye 10% % tini, nzvimbo yakanyungudika: ~11 °C)1.2.Nekuda kwekuita kwavo kwemagetsi muchikamu chemvura, maGaLM ari kuongororwa zvine mutsindo kana kuti akaremara nzira dzemagetsi kune akasiyana maapplication, anosanganisira electronic3,4,5,6,7,8,9 strained kana curved sensors 10, 11, 12 , 13, 14 uye inotungamirira 15, 16, 17. Kugadzirwa kwemichina yakadaro nekuisa, kudhinda, uye kuenzanisa kubva kuGaLM kunoda ruzivo uye kutonga kwezvakasiyana-siyana zveGaLM uye substrate yayo.MaGaLM ane tension yakakwira (624 mNm-1 yeEGaIn18,19 uye 534 mNm-1 yeGalinstan20,21) izvo zvinogona kuita kuti zviome kubata kana kushandura.Kuumbwa kwegoko rakaoma rekuzvarwa gallium oxide pamusoro peGaLM pasi pemamiriro ekunze kunopa goko rinodzikamisa iyo GaLM mune isiri-spherical shape.Ichi chivakwa chinobvumira GaLM kudhindwa, kuisirwa mumamicrochannels, uye kuenzanisirwa nekugadzikana kwemukati kunowanikwa neoxides19,22,23,24,25,26,27.Iyo yakaoma oxide shell inobvumirawo GaLM kuti inamate kune yakawanda yakatsetseka nzvimbo, asi inodzivirira yakaderera viscosity masimbi kubva pakuyerera akasununguka.Kupararira kweGALM panzvimbo zhinji kunoda simba rekupwanya oxide shell28,29.
Oxide shells inogona kubviswa ne, semuenzaniso, yakasimba acids kana mabhesi.Mukushaikwa kwemaokisi, GaLM inodonha pazvinenge zvese pamusoro penzvimbo nekuda kwekukakama kukuru kwepamusoro, asi pane zvisizvo: GaLM inonyorovesa simbi substrates.Ga inogadzira zvisungo zvesimbi nemamwe simbi kuburikidza nemaitiro anozivikanwa se "reactive wetting"30,31,32.Uku kunyorova kunowanzotariswa kana pasina maokisi epamusoro kufambisa simbi-kune-simbi kusangana.Nekudaro, kunyangwe nemaokisi emunyika muGaLM, zvinonzi simbi-kune-simbi inobatika inoumbwa kana maokisidhi apwanyika pakubata nesimbi yakatsetseka29.Reactive wetting inoguma yakaderera kuonana makona uye kunaka kunyorova kweakawanda simbi substrates33,34,35.
Kusvika pari zvino, zvidzidzo zvakawanda zvakaitwa pakushandiswa kwezvakanaka zvivakwa zve reactive wetting yeGaLM nesimbi kugadzira GaLM pateni.Semuyenzaniso, GaLM yakashandiswa kune patterned solid metal tracks nekuzora, kukunguruka, kupfapfaidza, kana shadow masking34, 35, 36, 37, 38. Kusarudza kunyorova kweGaLM pasimbi dzakaoma kunobvumira GaLM kuumba yakagadzikana uye yakanyatsotsanangurwa maitiro.Nekudaro, iyo yakakwirira yepasi tension yeGaLM inotadzisa kuumbwa kwemafirimu akaonda kwazvo euniform kunyangwe pamasimbi substrates.Kugadzirisa nyaya iyi, Lacour et al.yakashuma nzira yekugadzira yakatsetseka, yakapfava eGaLM akatetepa mafirimu pamusoro penzvimbo huru nekupusha yakachena gallium pagoridhe-yakavharidzirwa microstructured substrates37,39.Iyi nzira inoda vacuum deposition, iyo inononoka.Mukuwedzera, GaLM kazhinji haibvumidzwe kune michina yakadaro nekuda kwekugona kuvharidzirwa40.Evaporation inoisawo zvinhu pane substrate, saka pateni inodiwa kugadzira iyo pateni.Isu tiri kutsvaga nzira yekugadzira akatsetseka eGaLM mafirimu uye mapatani nekugadzira topographic simbi maficha ayo GaLM anonyorovesa ega uye akasarudzika mukushaikwa kwemaokisi echisikigo.Pano tinoshuma kunyorova kwakasarudzika kweiyo oxide-isina EGaIn (yakajairika GaLM) tichishandisa yakasarudzika maitiro ekunyorova pane photolithographically yakarongeka simbi substrates.Isu tinogadzira photolithographically inotsanangurwa pamusoro pezvimiro paiyo micro level yekudzidza imbibition, nekudaro tichidzora kunyorova kweoxide-isina mvura simbi.Iyo yakagadziridzwa yekunyorova zvivakwa zveEGaIn pane microstructured simbi nzvimbo inotsanangurwa nenhamba yekuongorora yakavakirwa paWenzel modhi uye iyo impregnation process.Chekupedzisira, isu tinoratidza nzvimbo yakakura yekuisa uye pateni yeEGaIn kuburikidza nekuzvitora, zvega uye kusarudza kunyorova pane microstructured simbi deposition nzvimbo.Tensile electrodes uye strain geji dzinosanganisira EGaIn zvimiro zvinounzwa sezvingangoita maapplication.
Absorption is capillary transport umo iyo mvura inopinda mukati meiyo textured surface 41, iyo inofambisa kupararira kwemvura.Takaongorora maitiro ekunyorova kweEGaIn pasimbi ine microstructured surface yakaiswa muHCl vapor (Fig. 1).Mhangura yaisarudzwa sesimbi yepasi. Panzvimbo dzakati sandara dzemhangura, EGaIn yakaratidza yakaderera kubata angle ye <20 ° pamberi peHCl mhute, nekuda kwe reactive wetting31 (Supplementary Fig. 1). Panzvimbo dzakati sandara dzemhangura, EGaIn yakaratidza yakaderera kubata angle ye <20 ° pamberi peHCl mhute, nekuda kwe reactive wetting31 (Supplementary Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20 ° в присутствии паров HCl из-за реактивного смачиванивания31 (дополния31). Panzvimbo dzakati sandara dzemhangura, EGaIn yakaratidza yakaderera <20° kuonana nekona pamberi peHCl mhute nekuda kwe reactive wetting31 (Supplementary Figure 1).在平坦的铜表面上，由于反应润湿，EGaIn 在存在HCl 蒸气的情况下显示<20° 的低接触角31（角31).在平坦的铜表面上，由于反应润湿，EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl из-за реактивного смальпивания (1). Panzvimbo dzakati sandara dzemhangura, EGaIn inoratidza yakaderera <20° kuonana makona pamberi peHCl mhute nekuda kwekunyorova kwekuita (Supplementary Figure 1).Takayera makona epedyo eEGaIn pamhangura yakawanda uye pamafirimu emhangura akaiswa papolydimethylsiloxane (PDMS).
a Columnar (D (dhayamita) = l (chinhambwe) = 25 µm, d (chinhambwe pakati pembiru) = 50 µm, H (kureba) = 25 µm) uye pyramidal (upamhi = 25 µm, kureba = 18 µm) microstructures paCu /PDMS substrates.b Kuchinja-kunoenderana nenguva mukona yekubatanidza pane zvidimbu zvepasi (pasina microstructures) uye mitsara yembiru nemapiramidhi ane PDMS yakavharwa nemhangura.c, d Interval kurekodha ye (c) maonero epadivi uye (d) maonero epamusoro eEGaIn kunyorova pamusoro nembiru pamberi peHCl mhute.
Kuti uongorore mhedzisiro yetopography pakunyorova, PDMS substrates ine columnar uye pyramidal pattern yakagadzirirwa, iyo mhangura yakaiswa netitanium adhesive layer (Fig. 1a).Yakaratidzwa kuti iyo microstructured pamusoro pePDMS substrate yakanga yakanyatsoputirwa nemhangura (Supplementary Fig. 2).Nguva-inotsamira yekubata angles yeEGaIn pane patterned uye planar copper-sputtered PDMS (Cu/PDMS) inoratidzwa muFigs.1b.Iko kuonana kwekona yeEGaIn pane patterned copper/PDMS inodonha kusvika 0° mukati me ~1 min.Iko kunatsurudzwa kwekunyorova kweEGaIn microstructures inogona kushandiswa neWenzel equation\({{{{\rm{cos}}}}}}}\,{\theta}_{{rough}}=r\,{{{{{ \rm{cos}}}}}}\,{\theta}_{0}\), apo \({\theta}_{{rough}}\) inomiririra kona yekusangana kwenzvimbo yakaoma, \ (r \) Kukasharara Kwepamusoro (= nzvimbo chaiyo/inooneka) uye kona yekubata mundege \({\theta}_{0}\).Mhedzisiro yekuwedzera kunyorova kweEGaIn panzvimbo dzine patani dziri muchibvumirano chakanaka neWenzel modhi, sezvo ma r ekumashure uye pyramidal patterned surfaces ari 1.78 uye 1.73, zvichiteerana.Izvi zvinoreva zvakare kuti kudonhedza kweEGaIn kuri panzvimbo yakamisikidzwa kuchapinda mumakororo ekuyamura kuri pasi.Zvakakosha kuziva kuti yunifomu yakafuratira mafirimu akaumbwa munyaya iyi, kusiyana nechiitiko neEGaIn pane zvisina kurongwa (Supplementary Fig. 1).
Kubva muonde.1c, d (Supplementary Movie 1) zvinogona kuonekwa kuti mushure me30 s, sezvo iyo inooneka yekona yekuona inoswedera pedyo ne0 °, EGaIn inotanga kupararira kure kure nemucheto wekudonha, iyo inokonzerwa nekutora (Supplementary Movie 2 uye Supplementary. Mufananidzo 3).Zvidzidzo zvakapfuura zvenzvimbo dzakati sandara zvakabatanidza chiyero chenguva che reactive wetting neshanduko kubva kune inertial kuenda ku viscous wetting.Saizi yenzvimbo ndechimwe chezvinhu zvakakosha pakuona kana kuzviparira kunoitika.Nekuenzanisa simba repamusoro risati rasvika uye shure kwekunge imbibition kubva kune thermodynamic point of view, yakakosha yekuona angle \({\theta}_{c}\)yembibition yakatorwa (ona Supplementary Discussion for details).Mhedzisiro \({\theta}_{c}\) inotsanangurwa se \({{({\rm{cos))))))\,{\theta}_{c}=(1-{\\) phi } _{S})/(r-{\phi}_{S})\) apo \({\phi}_{s}\) inomiririra chikamu chechikamu chiri pamusoro pepositi uye \(r\ ) inomiririra kushata kwepamusoro. Imbibition inogona kuitika kana \({\theta }_{c}\) > \({\theta }_{0}\), kureva, kona yekubata panzvimbo yakati sandara. Imbibition inogona kuitika kana \({\theta }_{c}\) > \({\theta }_{0}\), kureva, kona yekubata panzvimbo yakati sandara. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta } _ {0} \), т.е.контактный угол на плоской поверхности. Kunyura kunogona kuitika kana \({\theta }_{c}\) > \({\theta }_{0}\), kureva kona yekubata panzvimbo yakati sandara.当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Kusveta kunoitika kana \({\theta }_{c}\) > \({\theta }_{0}\), yekona yekubata mundege.Pazvimiro zvepashure, \(r\) uye \({\phi}_{s}\) zvinoverengerwa se \(1+\{(2\pi {RH}))/{d}^{2} \ } \ ) uye \(\pi {R}^{2}/{d}^{2}\), apo \(R\) inomiririra radius yembiru, \(H\) inomiririra kureba kwembiru, uye \ ( d \) ndiyo chinhambwe pakati pepakati pembiru mbiri (Fig. 1a).Kune iyo post-yakarongeka pamusoro pemuonde.1a, kona \({\theta}_{c}\) i60°, iyo yakakura kudarika \({\theta}_{0}\) ndege (~25° ) muHCl mhute Oxide-isina EGaIn paCu/PDMS.Naizvozvo, madonhwe eEGaIn anogona kupinda nyore nyore kuumbwa kwemhangura yekuisa pamusoro muFig. 1a nekuda kwekunyura.
Kuti tiongorore maitiro eiyo topographic saizi yepateni pakunyorova uye kunyura kweEGaIn, isu takasiyanisa saizi yembiru dzakavharwa nemhangura.Pamusoro pemuonde.2 inoratidza makona ekusangana uye kutorwa kweEGaIn pane aya ma substrates.Nharaunda l pakati pembiru yakaenzana nehupamhi hwemakoramu D uye inotangira kubva pa25 kusvika ku200 μm.Kureba kwe25 µm kunongogara kune makoramu ese.\({\theta}_{c}\) inodzikira nekuwedzera kukura kwekoramu (Tafura 1), zvinoreva kuti kunyura hakugoneki pamasubstrates ane makoramu makuru.Kune ese masaizi akaedzwa, \({\theta}_{c}\) yakakura kupfuura \({\theta}_{0}\) uye wicking inotarisirwa.Zvisinei, kunwa hakuwanzocherechedzwa kune post-patterned surfaces ne l uye D 200 µm (Fig. 2e).
Nguva-inotsamira yekubata kona yeEGaIn paCu/PDMS pamusoro ine makoramu ehukuru hwakasiyana mushure mekusangana neHCl mhute.b–e Maonero epamusoro uye epadivi eEGaIn wetting.b D = l = 25 µm, r = 1.78.muD = l = 50 μm, r = 1.39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.Maposita ese ane hurefu hwe25 µm.Iyi mifananidzo yakatorwa zvishoma nemaminitsi gumi nemashanu mushure mekusangana neHCl vapor.Madonhwe ari paEGaIn imvura inokonzerwa nekuita kwegallium oxide neHCl vapor.Ese mazero mabara mu(b – e) ari 2 mm.
Chimwe chiyereso chekuona mukana wekunyura kwemvura ndiko kugadzika kwemvura iri pamusoro mushure mekunge patani yashandiswa.Kurbin et al.Zvave zvichinzi kana (1) zvigaro zvakakwirira zvakakwana, madonhwe achabatwa nepamusoro pemaitiro;(2) kureba pakati pembiru kudiki;uye (3) kona yekubata kwemvura iri pamusoro idiki zvakakwana42.Nenhamba \({\theta}_{0}\) yemvura iri mundege ine zvinhu zvakafanana zve substrate inofanira kuva shoma pane yakakosha yekona yepining, \({\theta}_{c,{pini))} \ ), kuti itore pasina kubanira pakati pezvinyorwa, apo \({\theta}_{c,{pin}}={{{{\rm{arctan}}}}}}(H/\big\{ ( \ sqrt {2}-1)l\big\})\) (ona imwe nhaurirano yeruzivo).Kukosha kwe \({\theta}_{c,{pin}}\) zvinoenderana nehukuru hwepini (Tafura 1).Sarudza iyo dimensionless parameter L = l/H kutonga kana kunyura kunoitika.Pakunyura, L inofanira kunge iri pasi pechikumbaridzo, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\ tan} } {\ theta}_{{0}}\guru\}\).YeEGaIn \({\theta}_{0}={25}^{\circ})\) pane substrate yemhangura \({L}_{c}\) i5.2.Sezvo iyo L column ye200 μm iri 8, iyo yakakura kudarika kukosha kwe \({L}_{c}\), kutorwa kweEGaIn hakuitike.Kuti tiwedzere kuyedza mhedzisiro yejometri, takaona self-priming yeakasiyana H uye l (Supplementary Fig. 5 uye Supplementary Tafura 1).Mhedzisiro inowirirana nemaverengero edu.Nokudaro, L inoshanduka kuva inofanotaura inobudirira yekutora;simbi yemvura inomira kusveta nekuda kwekupinira kana chinhambwe chiri pakati pembiru chakakura zvichienzaniswa nekukwirira kwembiru.
Wettability inogona kutsanangurwa zvichienderana nekuumbwa kwepamusoro kwe substrate.Isu takaongorora mhedzisiro yekuumbwa kwepasi pakunyorova uye kutorwa kweEGaIn nekubatanidza Si uye Cu pambiru uye ndege (Supplementary Fig. 6).Iyo EGaIn yekuonana kona inodzikira kubva ~ 160 ° kusvika ~ 80 ° sezvo iyo Si/Cu yebhinari yepamusoro inowedzera kubva pa0 kusvika 75% pamhepo yemhangura yakati sandara.Kune 75% Cu/25% Si pamusoro, \({\theta}_{0}\) i ~80°, inofambirana ne \({L}_{c}\) yakaenzana ne0.43 maererano netsanangudzo iri pamusoro. .Nekuti makoramu l = H = 25 μm naL akaenzana ne1 mukuru pane chikumbaridzo \({L}_{c}\), iyo 75% Cu/25% Si pamusoro mushure mekuita maitiro haitore nekuda kwekusafamba.Sezvo iyo yekubata kona yeEGaIn ichiwedzera nekuwedzera kweSi, yakakwirira H kana yakaderera l inodiwa kukunda pinning uye impregnation.Naizvozvo, sezvo kona yekubata (kureva \({\theta}_{0}\)) inoenderana nemakemikari ari pamusoro, inogona zvakare kuona kana imbibition ichiitika mumicrostructure.
EGaIn kunyura pane patterned copper/PDMS inogona kunyorovesa simbi yemvura kuita mapatani anobatsira.Kuti uongorore huwandu hushoma hwemitsara yemakoramu inokonzera imbibition, iyo yekunyorova zvinhu zveEGaIn zvakaonekwa paCu/PDMS ine mitsetse yepashure-pattern ine nhamba dzakasiyana dzemitsetse kubva pa1 kusvika ku101 (Fig. 3).Kunyorova kunonyanya kuitika munharaunda yepost-patterning.Iyo EGaIn wicking yakacherechedzwa zvakavimbika uye kureba kwekutsvaira kwakawedzera nehuwandu hwemitsara yemakoramu.Absorption inenge isingamboitike kana paine zvigaro zvine mitsetse miviri kana mishoma.Izvi zvinogona kunge zvakakonzerwa nekuwedzera capillary pressure.Kuti kunyura kuitike mu columnar pattern, capillary pressure inokonzerwa ne curvature ye EGaIn musoro inofanira kukundwa (Supplementary Fig. 7).Tichifunga radius ye curvature ye12.5 µm yemutsara mumwechete EGaIn musoro une columnar pateni, capillary pressure is ~0.98 atm (~740 Torr).Iyi high Laplace pressure inogona kudzivirira kunyorova kunokonzerwa nekutorwa kweEGaIn.Zvakare, mitsetse mishoma yemakoramu inogona kuderedza simba rekunyudza iro rinokonzerwa necapillary action pakati peEGaIn nemakoramu.
a Madonhwe eEGaIn pane yakarongwa Cu/PDMS ine mapatani ehupamhi hwakasiyana (w) mumhepo (usati wasangana neHCl mhute).Mitsara yemarekeni inotangira kumusoro: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), uye 11 (w = 525 µm).b Kunyorova kwakananga kweEGaIn pa(a) mushure mekusangana neHCl mhute kwemaminetsi gumi.c, d Kunyorova kweEGaIn paCu/PDMS ine columnar zvimiro (c) mitsara miviri (w = 75 µm) uye (d) mutsara mumwe (w = 25 µm).Iyi mifananidzo yakatorwa maminetsi gumi mushure mekusangana neHCl mhute.Scale mabara pa (a, b) uye (c, d) ari 5 mm uye 200 µm, zvichiteerana.Miseve mu(c) inoratidza kukombama kwemusoro weEGaIn nekuda kwekutorwa.
Kutorwa kweEGaIn mune post-patterned Cu/PDMS inobvumira EGaIn kuti iumbwe nekusarudza wetting (Fig. 4).Kana donhwe reEGaIn rakaiswa panzvimbo ine patterned uye rakafumurwa kuHCl mhute, donho reEGaIn rinodonha kutanga, richigadzira kona diki yekusangana sezvo asidhi inobvisa chiyero.Zvadaro, kutora kunotanga kubva pamucheto wekudonha.Yakakura-nzvimbo patterning inogona kuwanikwa kubva centimeter-scale EGaIn (Fig. 4a, c).Sezvo kunyura kuchiitika chete pamusoro penzvimbo, EGaIn inongonyorovesa iyo patani nzvimbo uye inopotsa yamira kunyorova kana yasvika panzvimbo yakati sandara.Nokudaro, miganhu inopinza yeEGaIn maitiro inoonekwa (Fig. 4d, e).Pamusoro pemuonde.4b inoratidza kuti EGaIn inopinda sei munzvimbo isina kurongeka, kunyanya yakatenderedza nzvimbo iyo EGaIn droplet yakatanga kuiswa.Izvi zvaikonzerwa nekuti dhayamita diki diki remadonhwe eEGaIn akashandiswa muchidzidzo ichi akadarika hupamhi hwemavara ane patani.Madonhwe eEGaIn akaiswa panzvimbo yepaiti nejekiseni remanyorero kuburikidza ne27-G tsono uye sirinji, zvichikonzera madonhwe ane mashoma saizi ye1 mm.Dambudziko iri rinogona kugadziriswa nekushandisa madonhwe madiki EGaIn.Pakazere, Mufananidzo 4 unoratidza kuti kungonyorova kweEGaIn kunogona kukweverwa uye kunangwa kune microstructured nzvimbo.Kuenzaniswa nebasa rekare, nzira yekunyorova iyi inokurumidza uye hapana simba rekunze rinodiwa kuti uwane kunyorova kwakazara (Supplementary Table 2).
chiratidzo cheyunivhesiti, vara b, c muchimiro chemheni.Nzvimbo inonwisa mvura yakafukidzwa nenhevedzano yemakoramu ane D = l = 25 µm.d, mifananidzo yakakurisa yembabvu mu e (c).Scale mabara pa (a–c) uye (d, e) ari 5 mm uye 500 µm, zvichiteerana.Pa (c-e), madonhwe madiki ari pamusoro mushure mekudsorption anoshanduka kuita mvura semugumisiro wekuita pakati pegallium oxide neHCl vapor.Hapana mhedzisiro yakakosha yekuumbwa kwemvura pakunyorova yakaonekwa.Mvura inobviswa nyore nyore kuburikidza nekuomeswa kuri nyore.
Nekuda kwechimiro chemvura cheEGaIn, EGaIn yakavharwa Cu/PDMS (EGaIn/Cu/PDMS) inogona kushandiswa kuchinjika uye kutambanudza maelectrode.Mufananidzo 5a inofananidza kupikisa shanduko yepakutanga Cu/PDMS uye EGaIn/Cu/PDMS pasi pemitoro yakasiyana.Kupokana kweCu/PDMS kunokwira zvakanyanya mukunetsana, nepo kushorwa kweEGaIn/Cu/PDMS kunoramba kwakaderera mukunetsana.Pamusoro pemuonde.5b uye d inoratidza SEM mifananidzo uye inoenderana neEMF data yeCu/PDMS yakasvibira uye EGaIn/Cu/PDMS isati yasvika uye mushure mekushandisa voltage.Kune Cu/PDMS yakasimba, deformation inogona kukonzera kutsemuka mune yakaoma Cu firimu yakaiswa paPDMS nekuda kwe elasticity mismatch.Kusiyana neizvi, yeEGaIn/Cu/PDMS, EGaIn ichiri kupfekedza Cu/PDMS substrate uye inochengetedza kuenderera kwemagetsi pasina kutsemuka kana deformation yakakosha kunyangwe mushure mekuomerwa kwaiswa.Iyo data yeEDS yakasimbisa kuti gallium uye indium kubva kuEGaIn zvakagoverwa zvakaenzana paCu/PDMS substrate.Zvinokosha kuziva kuti ukobvu hweEGaIn firimu hwakafanana uye hunofananidzwa nekukwirira kwembiru. Izvi zvinosimbiswawo nekuenderera mberi kwekuongorora kwepamusoro, apo mutsauko uripo pakati pehupamhi hwefirimu yeEGaIn uye kureba kwepositi ndeye <10% (Supplementary Fig. 8 uye Tafura 3). Izvi zvinosimbiswawo nekuenderera mberi kwekuongorora kwepamusoro, apo mutsauko uripo pakati pehupamhi hwefirimu yeEGaIn uye kureba kwepositi ndeye <10% (Supplementary Fig. 8 uye Tafura 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn и выпльзото % < ьный рис. 8 и таблица 3). Izvi zvinosimbiswawo nekuenderera mberi kwekuongorora kwepamusoro, apo kusiyana kwakasiyana pakati peEGaIn firimu ukobvu uye kureba kwekoramu ndeye <10% (Supplementary Fig. 8 uye Tafura 3).进一步的形貌分析也证实了這一点，其中EGaIn 薄膜厚度与柱子高度之间的相对差异 <10%先血。 <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница между тольнейшим топографическим анализом, где относительная разница между тольнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn uye выплязото% ьный рис. 8 и таблица 3). Izvi zvakasimbiswawo nekumwe kuongorora kwenzvimbo, apo musiyano uripo pakati peEGaIn firimu ukobvu uye kureba kwekoramu yaive <10% (Supplementary Fig. 8 uye Tafura 3).Iyi imbibition-based wetting inobvumira kukora kweEGaIn coatings kuti idzorwe zvakanaka uye ichengetedzwe yakatsiga munzvimbo dzakakura, izvo zvinonetsa nekuda kwechimiro chayo chemvura.Figures 5c uye e enzanisa conductivity uye kuramba deformation yepakutanga Cu/PDMS uye EGaIn/Cu/PDMS.Mune demo, iyo LED yakabatidzwa kana yakabatana kune isina kubatwa Cu/PDMS kana EGaIn/Cu/PDMS maelectrodes.Kana yakasimba Cu/PDMS yakatambanudzwa, iyo LED inodzima.Zvisinei, maelectrodes eEGaIn/Cu/PDMS akaramba akabatana nemagetsi kunyange ari pasi pemutoro, uye chiedza che LED chakangodzima zvishoma nekuda kwekuwedzera kwekusagadzikana kwe electrode.
a Normalized kuramba shanduko nekuwedzera mutoro paCu/PDMS uye EGaIn/Cu/PDMS.b, d SEM mifananidzo uye simba dispersive X-ray spectroscopy (EDS) kuongorora pamberi (pamusoro) uye shure (pasi) polydiplexes akatakura mu (b) Cu/PDMS uye (d) EGaIn/Cu/methylsiloxane.c, e ma LED akabatanidzwa ku (c) Cu/PDMS uye (e) EGaIn/Cu/PDMS pamberi (pamusoro) uye mushure (pasi) kutambanudza (~ 30% kushushikana).Chikero bha mu (b) uye (d) i50 µm.
Pamusoro pemuonde.6a inoratidza kushorwa kweEGaIn/Cu/PDMS sebasa rekutambudzika kubva pa0% kusvika ku70%.Kuwedzera uye kudzoreredzwa kwekupokana kunoenderana ne deformation, iri muchibvumirano chakanaka nemutemo wePouillet wezvinhu zvisingachinjiki (R / R0 = (1 + ε) 2), uko R iri kuramba, R0 ndeyekutanga kuramba, ε is strain 43. Zvimwe zvidzidzo zvakaratidza kuti kana Pakatambanudzwa, zvimedu zvakasimba mumudziyo wemvura zvinogona kuzvigadzirisa zvakare uye zvinowedzera kugoverwa nekubatana kuri nani, nokudaro kuderedza kuwedzera kwekukwevera 43, 44 . Mubasa iri, zvakadaro, conductor is> 99% liquid metal nevhoriyamu sezvo maCu films ari 100 nm gobvu chete. Mubasa iri, zvakadaro, conductor is> 99% liquid metal nevhoriyamu sezvo maCu films ari 100 nm gobvu chete. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют толщину всего 100 нм. Zvisinei, mubasa iri, conductor ine > 99% yesimbi yemvura nehuwandu, sezvo mafirimu eCu ari chete 100 nm gobvu.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99% 的液态金属（按体积计）.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99%Zvisinei, mubasa iri, sezvo Cu firimu inongova 100 nm gobvu, kondakita ane zvinopfuura 99% mvura simbi (nehuwandu).Naizvozvo, isu hatitarisire Cu kuita mupiro wakakosha kune electromechanical zvinhu zvemakondakita.
Shanduko yakajairwa muEGaIn/Cu/PDMS kuramba inopesana nekuomarara muchikamu 0-70%.Kunyanya kunetseka kwakasvika kusati kwakundikana kwePDMS kwaiva 70% (Supplementary Fig. 9).Madonhwe matsvuku ndiwo maitiro edzidziso akafanotaurwa nemutemo waPuet.b EGaIn/Cu/PDMS conductivity kugadzikana bvunzo panguva yakadzokororwa kutambanudza-kutambanudza mitsetse.A 30% strain yakashandiswa mukuedzwa kwecyclic.Chiyero bhari pane inset ndeye 0.5 cm.L ndiyo yekutanga kureba kweEGaIn/Cu/PDMS isati yatambanudzwa.
Chiyero chekuyera (GF) chinoratidza kunzwisiswa kwe sensor uye inotsanangurwa seyero yekuchinja mukupikisa kushanduka mu strain45.GF yakawedzera kubva ku1.7 pa10% kushungurudza kusvika ku2.6 pa70% kushungurudza nekuda kwekushanduka kwejometri yesimbi.Kuenzaniswa nemamwe majeji ekuyedza, kukosha kweGF EGaIn/Cu/PDMS kuri pakati nepakati.Se sensor, kunyangwe iyo GF inogona kunge isiri yakanyanya kukwirisa, iyo EGaIn/Cu/PDMS inoratidza yakasimba kuramba shanduko mukupindura kune yakaderera chiratidzo kune ruzha chiyero.Kuti uongorore kugadzikana kwekugadzirisa kweEGaIn/Cu/PDMS, kupikisa kwemagetsi kwakatariswa panguva yakadzokororwa kutambanudza-kutambanudza kutenderera pa 30% strain.Sezvinoratidzwa mufig.6b, mushure me 4000 kutambanudza mitsara, kukosha kwekupikisa kwakaramba kuri mukati me10%, iyo inogona kunge yakakonzerwa nekuenderera mberi kwekugadzirwa kwechiyero panguva yekudzokorora kutambanudza46.Nokudaro, kugadzikana kwemagetsi kwenguva refu kweEGaIn / Cu / PDMS se electrode yakatambanudzwa uye kuvimbika kwechiratidzo semagetsi ekugadzirisa kwakasimbiswa.
Muchikamu chino, tinokurukura zvakagadziridzwa wetting zvivakwa zveGALM pane microstructured simbi nzvimbo inokonzerwa nekupinzwa.Kunyorova kwakazara kweEGaIn kwakangoerekana kwaitwa pane columnar uye pyramidal metal surfaces pamberi peHCl vapor.Izvi zvinogona kutsanangurwa nhamba zvichibva pamuenzaniso weWenzel uye nzira yekutsvaira, iyo inoratidza saizi ye-post-microstructure inodiwa pa wicking-induced wetting.Kunyorova uye kwakasarudzika kweEGaIn, inotungamirwa nesimbi ine microstructured simbi, inoita kuti zvikwanise kuisa majasi eyunifomu panzvimbo hombe uye kugadzira simbi yemvura mapatani.EGaIn-coated Cu / PDMS substrates inochengetedza magetsi ekubatanidza kunyange kana yakatambanudzwa uye mushure mekudzokorora kutenderera kutenderera, sekusimbiswa neSEM, EDS, uye magetsi ekudzivirira kuyerwa.Pamusoro pezvo, kupikisa kwemagetsi eCu/PDMS yakavharwa neEGaIn inochinja nekudzoreredza uye nekuvimbika mukuenderana neyakaiswa dhizaini, zvichiratidza kushanda kwayo kungangoita se sensor yekushungurudza.Zvinogoneka zvakanakira zvinopihwa neyemvura simbi wetting musimboti inokonzerwa nembibition ndeaya anotevera: (1) GaLM coating uye patterning inogona kuwanikwa pasina simba rekunze;(2) GaLM kunyorova pamhangura-yakavharwa microstructure pamusoro ndiyo thermodynamic.iyo inoguma yeGaLM firimu yakagadzikana kunyange pasi pe deformation;(3) kushandura kureba kwemhangura-yakavharwa mbiru inogona kuumba firimu reGaLM rine ukobvu hunodzorwa.Mukuwedzera, nzira iyi inoderedza huwandu hweGaLM hunodiwa kuumba firimu, sezvo mbiru dzinotora chikamu chefirimu.Semuenzaniso, kana mbiru dzine dhayamita ye200 μm (ine chinhambwe pakati pembiru dze25 μm) inounzwa, huwandu hweGaLM hunodiwa pakugadzira firimu (~ 9 μm3/μm2) hunofananidzwa nevhoriyamu yefirimu isina. mbiru.(25 µm3/µm2).Zvisinei, munyaya iyi, inofanira kurangarirwa kuti kupikisa kwezvinyorwa, kunofungidzirwa maererano nemutemo waPuet, kunowedzerawo kapfumbamwe.Pakazere, iyo yakasarudzika yekunyorova zvimiro zvesimbi simbi inokurukurwa muchinyorwa chino inopa inoshanda nzira yekuisa simbi dzemvura pane akasiyana ma substrates emagetsi anotambanudzwa uye mamwe maapplication ari kubuda.
PDMS substrates dzakagadzirwa nekusanganisa Sylgard 184 matrix (Dow Corning, USA) uye hardener mureshiyo ye10:1 uye 15:1 yetest test test, ichiteverwa nekurapa muovheni pa60°C.Mhangura kana silicon yakaiswa pasilicon wafers (Silicon Wafer, Namkang High Technology Co., Ltd., Republic of Korea) uye PDMS substrates ine 10 nm gobvu titanium adhesive layer uchishandisa tsika sputtering system.Columnar uye pyramidal zvimiro zvakaiswa pane PDMS substrate uchishandisa silicon wafer photolithographic process.Hupamhi uye urefu hwepiramidhi pateni ndeye 25 uye 18 µm, zvichiteerana.Kureba kwebhawa patani kwakagadziriswa pa25 µm, 10 µm, uye 1 µm, uye dhayamita rayo uye pitch zvakasiyana kubva pa25 kusvika 200 µm.
Iko kuonana kwekona yeEGaIn (gallium 75.5%/indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) yakayerwa uchishandisa donho-shape analyzer (DSA100S, KRUSS, Germany). Iko kuonana kwekona yeEGaIn (gallium 75.5%/indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) yakayerwa uchishandisa donho-shape analyzer (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5 %/индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) измеряли с помощью каплевидного аналиссора, Каплевидного аналиссора, Каплевидного аналиссора. Iko kumucheto kwekona yeEGaIn (gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) yakayerwa pachishandiswa droplet analyzer (DSA100S, KRUSS, Germany). EGaIn（镓75.5%/铟24.5%，>99.99%，Sigma Aldrich，大韩民国）的接触角使用滴分析仪（DSA100S,KRUSS,徉。 EGaIn (gallium75.5%/indium24.5%, >99.99%, Sigma Aldrich, 大韩民国) yakayerwa pachishandiswa contact analyzer (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5%/индий 24,5%, >99,99%, Sigma Aldrich, Республика Корея) измеряли с помощью анализатора формRUSSES ка,DAR Корея) Iko kumucheto kwekona yeEGaIn (gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) yakayerwa pachishandiswa chimiro cap analyzer (DSA100S, KRUSS, Germany).Isa substrate mukamuri yegirazi ine 5cm × 5cm × 5cm woisa 4–5 μl donhwe reEGaIn pasubstrate uchishandisa sirinji yepakati pe 0.5 mm.Kugadzira HCl mhute yepakati, 20 μL yeHCl mhinduro (37 wt.%, Samchun Chemicals, Republic of Korea) yakaiswa padivi pe substrate, iyo yakaitwa evaporated zvakakwana kuzadza kamuri mukati megumi s.
Iyo yepamusoro yakafananidzirwa uchishandisa SEM (Tescan Vega 3, Tescan Korea, Republic of Korea).EDS (Tescan Vega 3, Tescan Korea, Republic of Korea) yakashandiswa kudzidza elemental qualitative analysis uye kugovera.Iyo EGaIn/Cu/PDMS pamusoro petopography yakaongororwa pachishandiswa optical profilometer (The Profilm3D, Filmetrics, USA).
Kuongorora shanduko yemagetsi ekutenderera panguva yekutambanudza, masampula ane uye asina EGaIn akasungirirwa pamidziyo yekutambanudza (Bending & Stretchable Machine System, SnM, Republic of Korea) uye akabatanidzwa nemagetsi kune Keithley 2400 sosi mita. Kuongorora shanduko yemagetsi ekutenderera panguva yekutambanudza, masampula ane uye asina EGaIn akasungirirwa pamidziyo yekutambanudza (Bending & Stretchable Machine System, SnM, Republic of Korea) uye akabatanidzwa nemagetsi kune Keithley 2400 sosi mita. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn и без него закрепляли на оборудования для, Регипение, Меня, пропляли на оборудования для публика Корея) и электрически подключали к измерителю источника Keithley 2400. Kudzidza shanduko yemagetsi conductivity panguva yekutambanudza ma cycles, samples ine uye isina EGaIn yakaiswa pane inotambanudza midziyo (Bending & Stretchable Machine System, SnM, Republic of Korea) uye magetsi akabatanidzwa kune Keithley 2400 source mita.Kuti udzidze shanduko yemagetsi conductivity panguva yekutambanudza mitsara, samples ine uye isina EGaIn yakaiswa pane inotambanudza mudziyo (Bending uye Stretching Machine Systems, SnM, Republic of Korea) uye magetsi akabatana neKeithley 2400 SourceMeter.Inoyera shanduko yekupokana muhuwandu kubva pa0% kusvika 70% yemhando yemhando.Payedzo yekugadzikana, shanduko yekuramba yakayerwa pamusoro pe4000 30% strain cycles.
Kuti uwane rumwe ruzivo nezve dhizaini yekudzidza, ona Nature kudzidza abstract yakabatana nechinyorwa ichi.
Data inotsigira zvakabuda muchidzidzo ichi inoratidzwa muSupplementary Information uye Raw Data mafaira.Ichi chinyorwa chinopa data rekutanga.
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